DC Current Gain-
: hFE= 40@ IC= 0.5A
Collector-Emitter Breakdown Voltage -
: V(BR)CEO= 80V(Min)
Complement to type BD722
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for use in audio output and general purpose
ampli
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isc Silicon NPN Power Transistor
DESCRIPTION ·DC Current Gain-
: hFE= 40@ IC= 0.5A ·Collector-Emitter Breakdown Voltage -
: V(BR)CEO= 80V(Min) ·Complement to type BD722 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in audio output and general purpose
amplifier applications.
BD721 Datasheet
