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KSD362 - Silicon NPN Power Transistor

Description

Collector-Base Breakdown Voltage: V(BR)CBO= 150V(Min) Collector Current- IC= 5A Collector Power Dissipation: PC= 40W@ TC= 25℃ APPLICATIONS

Designed for B/W TV horizontal deflection output applications.

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Datasheet Details

Part number KSD362
Manufacturer Inchange Semiconductor Company
File Size 155.67 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet KSD362 Datasheet

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    INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD362 DESCRIPTION ·Collector-Base Breakdown Voltage: V(BR)CBO= 150V(Min) ·Collector Current- IC= 5A ·Collector Power Dissipation: PC= 40W@ TC= 25℃ APPLICATIONS ·Designed for B/W TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 70 V www.DataSheet4U.com VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature 5 A PC 40 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.
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