KSD362
KSD362 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Base Breakdown Voltage: V(BR)CBO= 150V(Min)
- Collector Current- IC= 5A
- Collector Power Dissipation: PC= 40W@ TC= 25℃
APPLICATIONS
- Designed for B/W TV horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
..
VEBO
Emitter-Base Voltage
Collector Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature
℃
Tstg
Storage Temperature Range
-55~150
℃ isc Website：.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 2m A ; RBE= ∞
V(BR)CBO
Collector-Base Breakdown Voltage
IC= 1m A ; IE=...
