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Inchange Semiconductor Company

KSD362 Datasheet Preview

KSD362 Datasheet

Silicon NPN Power Transistor

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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KSD362
DESCRIPTION
·Collector-Base Breakdown Voltage-
: V(BR)CBO= 150V(Min)
·Collector Current- IC= 5A
·Collector Power Dissipation-
: PC= 40W@ TC= 25
APPLICATIONS
·Designed for B/W TV horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150 V
VCEO
Collector-Emitter Voltage
www.DataSheet4U.com
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
70 V
8V
5A
40 W
150
-55~150
isc Websitewww.iscsemi.cn




Inchange Semiconductor Company

KSD362 Datasheet Preview

KSD362 Datasheet

Silicon NPN Power Transistor

No Preview Available !

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KSD362
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 2mA ; RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA ; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 0.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB=B 0.5A
ICBO Collector Cutoff Current
VCB= 100V; IE= 0
hFE DC Current Gain
IC= 5A; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 5V
MIN TYP. MAX UNIT
70 V
150 V
8
1.0 V
1.5 V
20 μA
20 140
10 MHz
‹ hFE Classifications
www.DataSheNet4U.com R
O
20-50 40-80 70-140
isc Websitewww.iscsemi.cn
2


Part Number KSD362
Description Silicon NPN Power Transistor
Maker Inchange Semiconductor Company
PDF Download

KSD362 Datasheet PDF






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