2SB1340 - Silicon PNP Darlington Power Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) High DC Current Gain- : hFE= 2000(Min)@ (VCE= -3V, IC= -2A) Complement to Type 2SD1889 APPLICATIONS

Designed for power amplifier applications.

Inchange Semiconductor Company Limited

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Datasheet Details

Part number	2SB1340
Manufacturer	Inchange Semiconductor Company Limited
File Size	214.31 KB
Description	Silicon PNP Darlington Power Transistor
Datasheet	2SB1340 Datasheet
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isc Silicon PNP Darlington Power Transistor 2SB1340 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -3V, IC= -2A) ·Complement to Type 2SD1889 APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -6 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -10 A 2 W 30 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.

Published: Jul 25, 2010 |