Datasheet4U Logo Datasheet4U.com

007N06N - Power Transistor

Description

.

.

.

.

Features

  • 100% avalanche tested.
  • Superior thermal resistance.
  • N-channel.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by Infineon

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IPT007N06N MOSFET OptiMOSTMPower-Transistor,60V Features •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation QualifiedaccordingtoJEDECStandard Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),max 0.75 mΩ ID 486 A Qoss 227 nC QG(0V..10V) 216 nC HSOF Tab 12345 678 Drain Tab Gate Pin 1 Source Pin 2-8 Type/OrderingCode IPT007N06N Package PG-HSOF-8 Marking 007N06N RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.3,2019-07-22 OptiMOSTMPower-Transistor,60V IPT007N06N TableofContents Description . . . . . . . . . . . . . . . . . . . . .
Published: |