Datasheet Summary
IPT007N06N
MOSFET
OptiMOSTMPower-Transistor,60V
Features
- 100%avalanchetested
- Superiorthermalresistance
- N-channel
- QualifiedaccordingtoJEDEC1)fortargetapplications
- Pb-freeleadplating;RoHSpliant
- Halogen-freeaccordingtoIEC61249-2-21
Productvalidation
QualifiedaccordingtoJEDECStandard
Table1KeyPerformanceParameters
Parameter
Value
Unit
RDS(on),max
0.75 mΩ
Qoss
227 nC
QG(0V..10V)
216 nC
HSOF Tab
12345 678
Drain Tab
Gate Pin 1
Source Pin 2-8
Type/OrderingCode IPT007N06N
Package PG-HSOF-8
Marking...