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012N08N5 - MOSFET

Description

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Features

  • Ideal for high frequency switching and sync. rec.
  • Excellent gate charge x RDS(on) product (FOM).
  • Very low on-resistance RDS(on).
  • N-channel, normal level.
  • 100% avalanche tested.
  • Pb-free plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

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IPT012N08N5 MOSFET OptiMOSTM5Power-Transistor,80V Features •Idealforhighfrequencyswitchingandsync.rec. •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100%avalanchetested •Pb-freeplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplications •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 80 V RDS(on),max 1.2 mΩ ID 400 A Qoss 208 nC QG(0V..10V) 178 nC HSOF Tab 12345 678 Drain Tab Gate Pin 1 Source Pin 2-8 Type/OrderingCode IPT012N08N5 Package PG-HSOF-8 Marking 012N08N5 RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.
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