012N08N5 Datasheet Text
IPT012N08N5
MOSFET
OptiMOSTM5Power-Transistor,80V
Features
- Idealforhighfrequencyswitchingandsync.rec.
- ExcellentgatechargexRDS(on)product(FOM)
- Verylowon-resistanceRDS(on)
- N-channel,normallevel
- 100%avalanchetested
- Pb-freeplating;RoHSpliant
- QualifiedaccordingtoJEDEC1)fortargetapplications
- Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
80
V
RDS(on),max
1.2 mΩ
ID
400
A
Qoss
208 nC
QG(0V..10V)
178 nC
HSOF Tab
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