030N10N
030N10N is Power Transistor manufactured by Infineon.
IPA030N10N3 G
Opti MOSTM3 Power-Transistor
Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max ID
- 175 °C operating temperature
- Pb-free lead plating; Ro HS pliant
- Qualified according to JEDEC1) for target application
- Ideal for high-frequency switching and synchronous rectification
- Halogen-free accoridng to IEC61249-2-21
Type
IPA030N10N3 G
100 V 3 m W 79 A
Package Marking
PG-TO220-FP 030N10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
T C=25 °C2)
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS
I D=79 A, R GS=25 W
Gate source voltage
V...
