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Infineon Technologies Electronic Components Datasheet

04N80C3 Datasheet

Power Transistor

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CoolMOSTM Power Transistor
Features
• New revolutionary high voltage technology
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
• Ultra low effective capacitances
• Fully isolated package (2500 VAC; 1 minute)
CoolMOSTM 800V designed for:
• Industrial application with high DC bulk voltage
• Switching Application ( i.e. active clamp forward )
Product Summary
V DS
R DS(on)max @ Tj = 25°C
Q g,typ
SPA04N80C3
800 V
1.3
23 nC
Type
SPA04N80C3
Package
PG-TO220-3
Marking
04N80C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current2)
I D T C=25 °C
Pulsed drain current3)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
3),4)
AR
Avalanche
current,
repetitive
t
3),4)
AR
MOSFET dv /dt ruggedness
I D,pulse
E AS
E AR
I AR
dv /dt
T C=100 °C
T C=25 °C
I D=0.8A, V DD=50 V
I D=4 A, V DD=50 V
V DS=0…640 V
Gate source voltage
V GS static
AC (f >1 Hz)
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
Mounting torque
M2.5 screws
Rev. 2.92
Page 1
Value
4
2.5
12
170
0.1
4
50
±20
±30
38
-55 ... 150
50
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
2018-02-12


Infineon Technologies Electronic Components Datasheet

04N80C3 Datasheet

Power Transistor

No Preview Available !

Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous diode forward current
Diode pulse current3)
Reverse diode dv /dt 5)
Symbol Conditions
IS
I S,pulse
T C=25 °C
dv /dt
SPA04N80C3
Value
4
12
4
Unit
A
V/ns
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient
R thJA
leaded
Soldering temperature,
wave soldering only allowed at leads
T sold
1.6 mm (0.063 in.)
from case for 10s
min.
Values
typ.
Unit
max.
- - 4 K/W
- - 80
- - 260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
800
-
-V
Avalanche breakdown voltage
V (BR)DS V GS=0 V, I D=4 A
- 870 -
Gate threshold voltage
V GS(th) V DS=V GS, I D=0.24 mA 2.1 3 3.9
Zero gate voltage drain current
I DSS
V DS=800 V, V GS=0 V,
T j=25 °C
-
- 10 µA
Gate-source leakage current
Drain-source on-state resistance
V DS=800 V, V GS=0 V,
T j=150 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on)
V GS=10 V, I D=2.5 A,
T j=25 °C
-
-
-
50 -
- 100 nA
1.1 1.3
Gate resistance
V GS=10 V, I D=2.5 A,
T j=150 °C
-
3
-
R G f =1 MHz, open drain - 1.2 -
Rev. 2.92
Page 2
2018-02-12


Part Number 04N80C3
Description Power Transistor
Maker Infineon
Total Page 10 Pages
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