Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous diode forward current
Diode pulse current2)
Reverse diode dv /dt 4)
Symbol Conditions
IS
I S,pulse
T C=25 °C
dv /dt
SPP06N80C3
Value
6
18
4
Unit
A
V/ns
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient
R thJA
leaded
Soldering temperature,
wave soldering only allowed at leads
T sold
1.6 mm (0.063 in.)
from case for 10s
min.
Values
typ.
Unit
max.
- - 1.5 K/W
- - 62
- - 260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Avalanche breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V (BR)DSS V GS=0 V, I D=250 µA
V (BR)DS V GS=0 V, I D=6 A
V GS(th) V DS=V GS, I D=0.25 mA
800
-
2.1
I DSS
V DS=800 V, V GS=0 V,
T j=25 °C
-
V DS=800 V, V GS=0 V,
T j=150 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on)
V GS=10 V, I D=3.8 A,
T j=25 °C
-
-
-
V GS=10 V, I D=3.8 A,
T j=150 °C
-
R G f =1 MHz, open drain -
-
870
3
-
50
-
0.78
2.1
1.2
-V
-
3.9
10 µA
-
100 nA
0.9 Ω
-
-Ω
Rev. 2.91
page 2
2011-09-28
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