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Infineon Technologies Electronic Components Datasheet

07N03LBG Datasheet

IPP07N03LBG

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OptiMOS®2 Power-Transistor
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target application
• N-channel - Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
• 175 °C operating temperature
• dv /dt rated
• Pb-free lead plating; RoHS compliant
Product Summary
V DS
R DS(on),max
ID
IPP07N03LB G
30 V
6.6 m
50 A
PG-TO220-3-1
Type
IPP07N03LB G
Package
PG-TO220-3-1
Marking
07N03LB
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current
I D,pulse T C=25 °C3)
Avalanche energy, single pulse
E AS I D=50 A, R GS=25
Reverse diode dv /dt
dv /dt
I D=50 A, V DS=20 V,
di /dt =200 A/µs,
T j,max=175 °C
Gate source voltage4)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1) J-STD20 and JESD22
Rev. 0.93
page 1
Value
50
50
200
164
6
±20
94
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
2006-05-10
Free Datasheet http://www.Datasheet4U.com


Infineon Technologies Electronic Components Datasheet

07N03LBG Datasheet

IPP07N03LBG

No Preview Available !

Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
R thJC
R thJA
minimal footprint
6 cm2 cooling area5)
IPP07N03LB G
min.
Values
typ.
Unit
max.
- - 1.8 K/W
- - 62
- - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=40 µA
I DSS
V DS=30 V, V GS=0 V,
T j=25 °C
30
1.2
-
-
1.6
0.1
-V
2
1 µA
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V DS=30 V, V GS=0 V,
T j=125 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on) V GS=4.5 V, I D=30 A
V GS=10 V, I D=50 A
RG
g fs
|V DS|>2|I D|R DS(on)max,
I D=50 A
-
-
-
-
-
10 100
1 100 nA
7.7 9.6 m
5.5 6.6
1.2 -
78 - S
2) Current is limited by bondwire; with an R thJC=1.8 K/W the chip is able to carry 84 A.
3) See figure 3
4) T j,max=150 °C and duty cycle D <0.25 for V GS<-5 V
5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
5 Diagrams are related to straight lead versions.
Rev. 0.93
page 2
2006-05-10
Free Datasheet http://www.Datasheet4U.com


Part Number 07N03LBG
Description IPP07N03LBG
Maker Infineon
Total Page 9 Pages
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