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120M1045 - 1200V SiC Trench MOSFET

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Infineon

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120M1045 1200V SiC Trench MOSFET by Infineon - Datasheet Preview — Datasheet preview – 120M1045

Datasheet Details

Part number	120M1045
Manufacturer	Infineon
File Size	1.45 MB
Description	1200V SiC Trench MOSFET
Datasheet	120M1045 Datasheet
Additional preview pages of the 120M1045 datasheet.

Product details

Features

Very low switching losses.
Threshold-free on state characteristic.
Wide gate-source voltage range.
Benchmark gate threshold voltage, VGS(th) = 4.5V.
0V turn-off gate voltage.
Fully controllable dv/dt.
Commutation robust body diode, ready for synchronous rectification.
Easy to use/drive due to sense (driver) source pin for better control of the gate.
Temperature independent turn-off switching losses Gate pin 4 Sense pin 3 Drain pin 1 Source pin 2 B.

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Published: Aug 14, 2021 |