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Infineon Technologies Electronic Components Datasheet

15N60C3 Datasheet

Power Transistor

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SPP15N60C3, SPI15N60C3
SPA15N60C3
Cool MOS™ Power Transistor
Feature
New revolutionary high voltage technology
Ultra low gate charge
VDS @ Tjmax
RDS(on)
ID
Periodic avalanche rated
PG-TO220FP PG-TO262
Extreme dv/dt rated
Ultra low effective capacitances
Improved transconductance
P-TO220-3-31
3
12
PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
650 V
0.28
15 A
PG-TO220
Type
SPP15N60C3
SPI15N60C3
SPA15N60C3
Package
PG-TO220
PG-TO262
PG-TO220FP
Ordering Code
Q67040-S4600
Q67040-S4601
SP000216325
Marking
15N60C3
15N60C3
15N60C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=7.5A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=15A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage static
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
Reverse diode dv/dt 6)
ID
ID puls
EAS
EAR
IAR
VGS
VGS
Ptot
Tj , Tstg
dv/dt
Value
SPP_I
SPA
15 151)
9.4 9.41)
45 45
460 460
Unit
A
A
mJ
0.8 0.8
15 15
±20 ±20
±30 ±30
156 34
-55...+150
15
A
V
W
°C
V/ns
Rev. 3.2
Rev. 3.3
page 1
Page 1
2009-12-22
2018-02-12


Infineon Technologies Electronic Components Datasheet

15N60C3 Datasheet

Power Transistor

No Preview Available !

SPP15N60C3, SPI15N60C3
SPA15N60C3
Maximum Ratings
Parameter
Drain Source voltage slope
VDS = 480 V, ID = 15 A, Tj = 125 °C
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - case, FullPAK
Thermal resistance, junction - ambient, leaded
Thermal resistance, junction - ambient, FullPAK
Soldering temperature, wavesoldering
1.6 mm (0.063 in.) from case for 10s 3)
Symbol
dv/dt
Value
50
Unit
V/ns
Symbol
RthJC
RthJC_FP
RthJA
RthJA_FP
Tsold
Values
Unit
min. typ. max.
- - 0.8 K/W
- - 3.7
- - 62
- - 80
- - 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions
Values
Unit
min. typ. max.
Drain-source breakdown voltage
Drain-Source avalanche
breakdown voltage
V(BR)DSS VGS=0V, ID=0.25mA
V(BR)DS VGS=0V, ID=15A
600
-
-
700
-V
-
Gate threshold voltage
VGS(th) ID=675µA, VGS=VDS 2.1 3 3.9
Zero gate voltage drain current IDSS
VDS=600V, VGS=0V,
µA
Tj=25°C
- 0.1 1
Tj=150°C
- - 100
Gate-source leakage current
IGSS
Drain-source on-state resistance RDS(on)
VGS=30V, VDS=0V
VGS=10V, ID=9.4A
Tj=25°C
Tj=150°C
- - 100 nA
- 0.25 0.28
- 0.68 -
Gate input resistance
RG f=1MHz, open drain - 1.23 -
Rev. 3.3
Page 2
2018-02-12


Part Number 15N60C3
Description Power Transistor
Maker Infineon
Total Page 14 Pages
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