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Infineon Technologies Electronic Components Datasheet

15N60HS Datasheet

High Speed IGBT

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SGB15N60HS
^
High Speed IGBT in NPT-technology
30% lower Eoff compared to previous generation
Short circuit withstand time – 10 µs
Designed for operation above 30 kHz
NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate Eoff increase with temperature
- very tight parameter distribution
High ruggedness, temperature stable behaviour
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1 for target applications
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-263-3-2 (D²-PAK)
(TO-263AB)
Type
VCE
IC
Eoff
Tj
SGB15N60HS
600V 15A 200µJ 150°C
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 600V, Tj 150°C
Gate-emitter voltage static
transient (tp<1µs, D<0.05)
Short circuit withstand time2)
VGE = 15V, VCC 400V, Tj 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Time limited operating junction temperature for t < 150h
Soldering temperature (reflow soldering, MSL1)
Marking
Package
G15N60HS PG-TO-263-3-2
Symbol
VCE
IC
ICpuls
-
VGE
tSC
Ptot
Tj ,Tstg
Tj(tl)
-
Value
600
27
15
60
60
±20
±30
10
138
-55...+150
175
245
Unit
V
A
V
µs
W
°C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev 2.3 Oct 06
Free Datasheet http://www.datasheet4u.com/


Infineon Technologies Electronic Components Datasheet

15N60HS Datasheet

High Speed IGBT

No Preview Available !

SGB15N60HS
^
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
SMD version, device on PCB1)
Symbol
RthJC
RthJA
RthJA
Conditions
Max. Value
0.9
62
40
Unit
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
V(BR)CES
VCE(sat)
VGE(th)
ICES
IGES
gfs
VGE=0V, IC=500µA
VGE = 15V, IC=15A
Tj=25°C
Tj=150°C
IC=400µA,VCE=VGE
VCE=600V,VGE=0V
Tj=25°C
Tj=150°C
VCE=0V,VGE=20V
VCE=20V, IC=15A
min.
600
3
-
-
-
-
Value
Typ.
-
2.8
3.5
4
-
-
-
10
Unit
max.
-V
3.15
4.00
5
40
2000
100
µA
nA
S
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current2)
LE
IC(SC)
VCE=25V,
VGE=0V,
f=1MHz
VCC=480V, IC=15A
VGE=15V
VGE=15V,tSC10µs
VCC 400V,
Tj 150°C
-
-
-
-
-
-
810
83
51
80
7
135
pF
nC
nH
A
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for
collector connection. PCB is vertical without blown air.
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
2
Rev 2.3 Oct 06


Part Number 15N60HS
Description High Speed IGBT
Maker Infineon
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15N60HS Datasheet PDF






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