170M1450 mosfet equivalent, silicon carbide mosfet.
* VDSS = 1700 V at Tvj = 25°C
* IDDC = 10 A at TC = 25°C
* RDS(on) = 450 mΩ at VGS = 12 V, Tvj = 25°C
* Optimized for fly-back topologies
* 12 V / 0 V.
* General purpose drives (GPD)
* EV-Charging
* Energy Storage Systems (ESS)
* String inverter
* Unin.
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