1ED3123MU12H Datasheet | Infineon

Feature list - Single channel isolated gate driver - For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and Si C MOSFETs - Up to 14.0 A typical peak output current - 40 V absolute maximum output supply voltage - High mon-mode transient immunity CMTI > 200 k V/µs - Separate source and sink outputs or active Miller clamp with active shutdown and short circuit clamping - Galvanically isolated coreless transformer gate driver - 3.3 V and 5 V input supply voltage - Suitable for operation at high ambient temperature and in fast switching applications - UL 1577 certification VISO = 5.7 k V (rms) for 1 min (File E311313) Potential applications - AC and brushless DC motor drives - High voltage DC-DC converter and DC-AC inverter - Induction heating resonant application - UPS-systems - mercial air-conditioning (CAC) - Server and tele switched mode power supplies (SMPS) - Solar inverters, e.g. for 1500 V (DC) systems PG-DSO-8 Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Device information Product type 1ED3120MU12H 1ED3121MU12H 1ED3122MU12H 1ED3123MU12H 1ED3124MU12H 1ED3131MU12H Typical output current and configuration 5.5 A separate source and sink 5.5 A separate source and sink 10.0 A and 3.0 A clamp 14.0 A separate source and sink 14.0 A separate source and sink 5.5 A separate source and sink, 180 ns minimum input pulse suppression time UVLO (VUVLOL2,min) 8.0 V 10.5 V 8.0 V 8.0 V 10.5 V 10.5 V Certification (File E311313) UL UL UL UL UL UL Package PG-DSO-8 PG-DSO-8 PG-DSO-8 PG-DSO-8 PG-DSO-8 PG-DSO-8 Please read the Important Notice and Warnings at the end of this document .infineon./gdisolated v2.1 2021-03-01 Eice DRIVER™ 1ED31xx MU12H pact Description Description The 1ED31xx MU12H (1ED-X3 pact) gate driver ICs are galvanically isolated single channel gate driver ICs for IGBT, MOSFET and Si C MOSFET in PG-DSO-8 package. They provide a typical output current of up to 14.0 A on...