1ED3142MU12F Datasheet | Infineon

Features - Single-channel galvanically isolated coreless transformer based gate driver - Separate outputs, output UVLO referenced to GND2 or adjustable output UVLO options - For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and Si C MOSFETs - Up to 6.5 A typical peak output current - 40 ns propagation delay with 7 ns part-to-part matching (skew) - 35 V absolute maximum output supply voltage - Very high (best-in-class) mon-mode transient immunity CMTI > 300 k V/µs - Active shutdown and short circuit clamping - 150 mil DSO-8 and 300 mil LDSO-8 packages with CTI > 600 - 3.3 V and 5 V input supply voltage - Suitable for operation at high ambient temperature and in fast switching applications - UL 1577 certification VISO = 3.0 k V (rms) for 1 min (File E311313) for 1ED314x MU12F - UL 1577 certification VISO = 5.7 k V (rms) for 1 min (File E311313), and IEC 60747-17 (VIORM = 1767 V) (planned) for 1ED314x MC12H Potential applications - EV charging - Energy storage systems - Solar inverters - Server and tele switched mode power supplies (SMPS) - UPS systems - AC and brushless DC motor drives - mercial heating, ventilation and air conditioning (HVAC) systems Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Description The Eice DRIVER™ 1ED314x Mx12x gate driver ICs are high-performance galvanically isolated single-channel gate drivers designed for driving IGBTs, MOSFETs and Si C MOSFETs. The gate driver ICs are available in a 150-mil, 8-pin package (1ED314x MU12F) and a 300-mil, 8-pin package (1ED314x MC12H). They provide a typical output current of up to 6.5 A. The input logic pins operate on a wide input voltage range of 3 V to 6.5 V using CMOS threshold levels to support 3.3 V microcontrollers. Data transfer across the isolation barrier is realized by the coreless transformer technology. All variants have input and output undervoltage lockout (UVLO) and active shutdown. Datasheet .infineon. VCC1 VCC2,H OUTH IN+ Sin...