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1EDI20N12AF - Single Channel MOSFET and GaN HEMT Gate Driver

General Description

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Key Features

  • . . 13 Undervoltage Lockout (UVLO).
  • . . . 13 Active Shut-Down.
  • . . 13 Short Circuit Clamping.
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Datasheet Details

Part number 1EDI20N12AF
Manufacturer Infineon
File Size 1.67 MB
Description Single Channel MOSFET and GaN HEMT Gate Driver
Datasheet download datasheet 1EDI20N12AF Datasheet

Full PDF Text Transcription for 1EDI20N12AF (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 1EDI20N12AF. For precise diagrams, and layout, please refer to the original PDF.

1EDI EiceDRIVER™ Compact 1EDI20N12AF Single Channel MOSFET and GaN HEMT Gate Driver IC 1EDI20N12AF Data Sheet Rev. 2.0, 2015-06-01 Industrial Power Control Edition 2015-0...

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ata Sheet Rev. 2.0, 2015-06-01 Industrial Power Control Edition 2015-06-01 Published by Infineon Technologies AG 81726 Munich, Germany © 2015 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of int

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