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2ED21094S06J - 650V half bridge gate driver

Download the 2ED21094S06J datasheet PDF. This datasheet also covers the 2ED2109S06F variant, as both devices belong to the same 650v half bridge gate driver family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2ED2109S06F-Infineon.pdf) that lists specifications for multiple related part numbers.

Overview

2ED2109 (4) S06F (J) 2ED2109 (4) S06F (J) 650 V half bridge gate driver with integrated bootstrap.

Key Features

  • Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology.
  • Negative VS transient immunity of 100 V.
  • Floating channel designed for bootstrap operation.
  • Operating voltages (VS node) upto + 650 V.
  • Maximum bootstrap voltage (VB node) of + 675 V.
  • Integrated ultra-fast, low resistance bootstrap diode.
  • Logic operational up to.
  • 11 V on VS Pin.
  • Negative voltage tolerance on inputs of.
  • 5 V.
  • Independent under voltage lockout for both chann.

More Datasheets from Infineon

Part Number Description
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2ED21084S06J 650V half bridge gate driver
2ED2108S06F 650V half bridge gate driver
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2ED21814S06J 650V high-side and low-side gate driver
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