2ED21094S06J Overview
2ED2109 (4) S06F (J) 2ED2109 (4) S06F (J) 650 V half bridge gate driver with integrated bootstrap diode Features Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology Negative VS transient immunity of 100 V Floating channel designed for bootstrap operation Operating voltages (VS node) upto + 650 V Maximum bootstrap voltage (VB node) of + 675 V Integrated ultra-fast, low resistance bootstrap diode Logic operational up to...
2ED21094S06J Key Features
- Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology
- Negative VS transient immunity of 100 V
- Floating channel designed for bootstrap operation
- Operating voltages (VS node) upto + 650 V
- Maximum bootstrap voltage (VB node) of + 675 V
- Integrated ultra-fast, low resistance bootstrap diode
- Logic operational up to -11 V on VS Pin
- Negative voltage tolerance on inputs of -5 V
- Independent under voltage lockout for both channels
- Schmitt trigger inputs with hysteresis