2ED2109S06F
Description
The 2ED2109 (4) S06F (J) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.
Key Features
- Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology
- Negative VS transient immunity of 100 V
- Floating channel designed for bootstrap operation
- Operating voltages (VS node) upto + 650 V
- Maximum bootstrap voltage (VB node) of + 675 V
- Integrated ultra-fast, low resistance bootstrap diode
- Logic operational up to –11 V on VS Pin
- Negative voltage tolerance on inputs of –5 V
- Independent under voltage lockout for both channels
- Schmitt trigger inputs with hysteresis
