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2ED2109S06F - 650V half bridge gate driver

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Overview

2ED2109 (4) S06F (J) 2ED2109 (4) S06F (J) 650 V half bridge gate driver with integrated bootstrap.

Key Features

  • Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology.
  • Negative VS transient immunity of 100 V.
  • Floating channel designed for bootstrap operation.
  • Operating voltages (VS node) upto + 650 V.
  • Maximum bootstrap voltage (VB node) of + 675 V.
  • Integrated ultra-fast, low resistance bootstrap diode.
  • Logic operational up to.
  • 11 V on VS Pin.
  • Negative voltage tolerance on inputs of.
  • 5 V.
  • Independent under voltage lockout for both chann.

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