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2EDF8275F - MOSFET gate-driver

Download the 2EDF8275F datasheet PDF. This datasheet also covers the 2EDF7275F variant, as both devices belong to the same mosfet gate-driver family and are provided as variant models within a single manufacturer datasheet.

Description

The EiceDRIVER™ 2EDi is a family of fast dual-channel isolated MOSFET gate-driver ICs providing functional (2EDFx) or reinforced (2EDSx) input-to-output isolation by means of coreless transformer (CT) technology.

Features

  • 4 A/8 A or 1 A/2 A source/sink output current.
  • Up to 10 MHz PWM switching frequency.
  • PWM signal propagation delay typ. 37 ns with.
  • 3 ns channel-to-channel mismatch.
  • +7/-6 ns propagation delay variance.
  • Common Mode Transient Immunity CMTI >150 V/ns.
  • Fast safety turn-off in case of input side Undervoltage Lockout (UVLO).
  • Output supply voltage from 4.5 V to 20 V with 4 V or 8 V UVLO threshold.
  • Wide temperature operati.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2EDF7275F-Infineon.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Infineon

Part Number Description
2EDF5215F high-side and low-side gate driver
2EDF5215G high-side and low-side gate driver
2EDF7175F MOSFET gate-driver
2EDF7275F MOSFET gate-driver
2EDF7275K MOSFET gate-driver

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
EiceDRIVER™ 2EDi product family Fast, robust, dual-channel, functional and reinforced isolated MOSFET gate-driver with accurate and stable timing Description The EiceDRIVER™ 2EDi is a family of fast dual-channel isolated MOSFET gate-driver ICs providing functional (2EDFx) or reinforced (2EDSx) input-to-output isolation by means of coreless transformer (CT) technology. Due to high driving current, excellent common-mode rejection and fast signal propagation, 2EDi is particularly well suited for driving medium- to high-voltage MOSFETs (CoolMOS™, OptiMOS™, CoolSIC™, CoolGaN™) in fastswitching power systems. Features • 4 A/8 A or 1 A/2 A source/sink output current • Up to 10 MHz PWM switching frequency • PWM signal propagation delay typ.
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