2EDL803X Datasheet | Infineon

Features - Level-shit high-side low-side dual channel driver - Independent high-side and low-side TTL logic inputs - 3 A & 4 A source / 6 A sink output current capability - 120 V absolute maximum boot voltage - Integrated bootstrap diode - -10 V to 20 V input pin capability for increased robustness - -5 A output pin reverse current capability - -12 V absolute maximum negative voltage on HS - 8 V to 17 V supply voltage operating range - UVLO for both high-side and low-side driver - Fast propagation delay (< 35 ns) - 2 ns typical delay matching - Enable / disable functionality in SON10 (3 x 3) package - Ofered in SON8 (4x4), SON10 (4x4) and SON10 (3x3) package - Specified from -40ºC to 125ºC operating junction temperature range Potential applications - Tele/Data half and full bridge power converters - Current-fed push-pull converters - Buck converters - Two-switch forward converters - Active clamp forward converters - Class D amplifiers - DC motor drives Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Description The 2EDL803x is designed to drive both high-side and low-side MOSFETs in a half-bridge configuration. The floating high-side driver is capable of driving a high-side MOSFET operating up to 120 V bootstrap voltage. Version 4 provides full 4 A current capability, while version 3 provides 3 A. The high-side bias voltage is generated using a bootstrap technique using an integrated bootstrap diode. The inputs of the driver are TTL logic patible and can withstand input mon mode swing from -10 V up to 20 V. Independent inputs allow controlling high- and low-side domains independently. Undervoltage lockout (UVLO) on both high- and low-side supplies forces the corresponding outputs low in case of insuficient supply. The 2EDL803x is available in SON-8 pins 4 mm x 4 mm, SON-10 pins 4 mm x 4 mm and SON-10 pins 3 mm x 3 mm package. Table 1 Device information Part number 2EDL803X-G4B 2EDL803X-G3C...