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Infineon Technologies Electronic Components Datasheet

2EDN7523R Datasheet

EiceDRIVER MOSFET

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EiceDRIVER™
2EDN752x / 2EDN852x
Features
Fast, precise, strong and compatible
• Highly efficient SMPS enabled by 5 ns fast slew rates and 17 ns propagation delay precision for fast MOSFET
and GaN switching
• 1 ns channel-to-channel propagation delay accuracy enables safe use of two channels in parallel
• Two independent 5 A channels enable numerous deployment options
• Industry standard packages and pinout ease system-design upgrades
The new Reference in Ruggedness
• 4.2 V and 8 V UVLO (Under Voltage Lock Out) options ensure instant MOSFET protection under abnormal
conditions
• -10 V control and enable input robustness delivers crucial safety margin when driving pulse-transformers or
driving MOSFETs in through hole packaging
• 5 A reverse current robustness eliminates the need for output protection circuitry.
Typical Applications
• Server SMPS
• TeleCom SMPS
• DC-to-DC Converter
• Bricks
• Power Tools
• Industrial SMPS
• Motor Control
• Solar SMPS
Example Topologies
• Single and interleaved PFC
• LLC, ZVS with pulse transformer
• Synchronous Rectification
Description
The 2EDN752x/2EDN852x is an advanced dual-channel driver. It is suited to drive logic and normal level MOSFETs
and supports OptiMOSTM, CoolMOSTM, Standard Level MOSFETs, Superjunction MOSFETs, as well as IGBTs and
GaN Power devices.
Data Sheet
Please read the Important Notice and Warnings at the end of this document
www.infineon.com
Rev. 2.5
2018-04-20


Infineon Technologies Electronic Components Datasheet

2EDN7523R Datasheet

EiceDRIVER MOSFET

No Preview Available !

EiceDRIVER™
2EDN752x / 2EDN852x
Features
The control and enable inputs are LV-TTL compatible (CMOS 3.3 V) with an input voltage range from -5 V to +20 V.
-10 V input pin robustness protects the driver against latch-up or electrical overstress which can be induced by
parasitic ground inductances. This greatly enhances system stability.
4.2 V and 8 V UVLO (Under Voltage Lock Out) options ensure instant MOSFET and GaN protection under abnormal
conditions. Under such circumstances, this UVLO mechanism provides crucial independence from whether and
when other supervisors circuitries detect abnormal conditions.
Each of the two outputs is able to sink and source 5 A currents utilizing a true rail-to-rail stage. This ensures very
low on resistance of 0.7 up to the positive and 0.55 down to the negative rail respectively. Very tight channel
to channel delay matching, typ. 1 ns, permits parallel use of two channels, leading to a source and sink capability
of 10 A. Industry leading reverse current robustness eliminates the need for Schottky diodes at the outputs and
reduces the bill-of-material.
The pinout of the 2EDN family is compatible with the industry standard. Two different control input options,
direct and inverted, offer high flexibility. Three package variants, DSO 8-pin, TSSOP 8-pin, WSON 8-pin, allow
optimization of PCB board space usage and thermal characteristics.
2EDN752x /
2EDN852x
1 ENA
2 INA
33 GND
44 INB
ENB 88
OUTA 7
VDD 6
OUTB 55
VDD
Rg1
Rg2
CVDD
Load1
Load2
M1
M2
Data Sheet
2
Rev. 2.5
2018-04-20


Part Number 2EDN7523R
Description EiceDRIVER MOSFET
Maker Infineon
Total Page 30 Pages
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