2EDS8165H Datasheet (Infineon)

Part 2EDS8165H
Description MOSFET gate-driver
Category MOSFET
Manufacturer Infineon
Size 726.18 KB
Pricing from 2.25 USD, available from DigiKey and Newark.Powered by Octopart
Infineon

2EDS8165H Overview

Key Specifications

Package: SOP
Operating Voltage: 3.3 V
Max Voltage (typical range): 3.5 V
Min Voltage (typical range): 3 V

Description

The EiceDRIVER™ 2EDi is a family of fast dual-channel isolated MOSFET gate-driver ICs providing functional (2EDFx) or reinforced (2EDSx) input-to-output isolation by means of coreless transformer (CT) technology. Due to high driving current, excellent common-mode rejection and fast signal propagation, 2EDi is particularly well suited for driving medium- to high-voltage MOSFETs (CoolMOS™, OptiMOS™, CoolSIC™, CoolGaN™) in fastswitching power systems.

Key Features

  • 4 A/8 A or 1 A/2 A source/sink output current
  • Up to 10 MHz PWM switching frequency
  • PWM signal propagation delay typ. 37 ns with – 3 ns channel-to-channel mismatch – +7/-6 ns propagation delay variance
  • Common Mode Transient Immunity CMTI >150 V/ns
  • Fast safety turn-off in case of input side Undervoltage Lockout (UVLO)

Price & Availability

Seller Inventory Price Breaks Buy
DigiKey 0 1+ : 2.25 USD View Offer
DigiKey 0 1+ : 2.25 USD View Offer