• Part: 2EDS8165H
  • Description: MOSFET gate-driver
  • Manufacturer: Infineon
  • Size: 726.18 KB
Download 2EDS8165H Datasheet PDF
2EDS8165H page 2
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2EDS8165H Key Features

  • 4 A/8 A or 1 A/2 A source/sink output current
  • Up to 10 MHz PWM switching frequency
  • 3 ns channel-to-channel mismatch
  • +7/-6 ns propagation delay variance
  • mon Mode Transient Immunity CMTI >150 V/ns
  • Fast safety turn-off in case of input side Undervoltage Lockout (UVLO)
  • Output supply voltage from 4.5 V to 20 V with 4 V or 8 V UVLO threshold
  • Wide temperature operating range TJ = -40°C to +150°C
  • RoHS pliant wide /narrow-body (WB/NB) DSO16 and 5 mm × 5 mm LGA packages
  • Fully qualified according to JEDEC for Industrial