2N0807 - Power-Transistor

Infineon

Key Features

N-channel - Enhancement mode.
Automotive AEC Q101 qualified.
MSL1 up to 260°C peak reflow.
175°C operating temperature.
Green package (lead free) PG-TO263-3-2.
Ultra low Rds(on).
100% Avalanche tested IPB80N08S2-07 IPP80N08S2-07, IPI80N08S2-07 Product Summary V DS R DS(on),max (SMD version) ID 75 V 7.1 mΩ 80 A PG-TO220-3-1 PG-TO262-3-1 Type IPB80N08S2-07 IPP80N08S2-07 IPI80N08S2-07 Package PG-TO263-3-2 PG-TO220-3-1 PG-T.

2N0807 power-transistor by Infineon - Datasheet Preview

Datasheet Details

Part number	2N0807
Manufacturer	Infineon
File Size	160.17 KB
Description	Power-Transistor
Datasheet	2N0807 Datasheet

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Full PDF Text Transcription (Reference)

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OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) PG-TO263-3-2 • Ultra low Rds(on) • 100% Avalanche tested IPB80N08S2-07 IPP80N08S2-07, IPI80N08S2-07 Product Summary V DS R DS(on),max (SMD version) ID 75 V 7.