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33CN10N Datasheet Power-Transistor

Manufacturer: Infineon

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Overview

IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G OptiMOS™2.

Key Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 33 mW 27 A.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

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