35CN10N Datasheet - Infineon

Power-Transistor

* N-channel, normal level

* Excellent gate charge x R DS(on) product (FOM)

* Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 33 mW 27 A

* 175 °C operating temperature

* Pb-free lead plating; RoHS compliant

* Qualif

35CN10N

829.32 KB

Power-transistor.

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35CN10N Power-Transistor Infineon

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