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35N60C3 - SPW35N60C3

Key Features

  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv /dt rated.
  • Ultra low effective capacitances.
  • Improved transconductance Product Summary V DS @ T j,max R DS(on),max ID SPW35N60C3 650 V 0.1 Ω 34.6 A PG-TO247 Type SPW35N60C3 Package PG-TO247 Ordering Code Q67040-S4673 Marking 35N60C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Pulsed.

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CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv /dt rated • Ultra low effective capacitances • Improved transconductance Product Summary V DS @ T j,max R DS(on),max ID SPW35N60C3 650 V 0.1 Ω 34.6 A PG-TO247 Type SPW35N60C3 Package PG-TO247 Ordering Code Q67040-S4673 Marking 35N60C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Pulsed drain current1) Avalanche energy, single pulse Avalanche energy, repetitive t 1),2) AR Avalanche current, repetitive t 1) AR Symbol Conditions I D T C=25 °C T C=100 °C I D,pulse T C=25 °C E AS I D=17.3 A, V DD=50 V E AR I D=34.6 A, V DD=50 V I AR Drain source voltage slope dv /dt I D=34.