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Infineon Technologies Electronic Components Datasheet

4N041R1 Datasheet

Power-Transistor

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IPLU300N04S4-1R1
OptiMOS-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant); 100% lead free
• Ultra low Rds(on)
• 100% Avalanche tested
Product Summary
VDS
RDS(on)
ID
40 V
1.15 mW
300 A
H-PSOF-8-1
Tab
8
1 Tab
1
8
Type
Package
IPLU300N04S4-1R1 H-PSOF-8-1
Marking
4N041R1
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V1)
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse2) E AS I D=150 A
Avalanche current, single pulse
I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg -
Value
300
277
1200
300
300
±20
300
-55 ... +175
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2014-11-21


Infineon Technologies Electronic Components Datasheet

4N041R1 Datasheet

Power-Transistor

No Preview Available !

IPLU300N04S4-1R1
Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case
SMD version, device on PCB
R thJC
R thJA
-
minimal footprint
6 cm2 cooling area3)
min.
Values
typ.
Unit
max.
- - 0.5 K/W
- - 62
- - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
V (BR)DSS
V GS=0 V,
I D=1 mA
V GS(th) V DS=V GS, I D=125 µA
I DSS
V DS=40 V, V GS=0 V,
T j=25 °C
V DS=18 V, V GS=0 V,
T j=85 °C2)
I GSS
RDS(on)
V GS=20 V, V DS=0 V
V GS=10 V, I D=100 A
40
2.0
-
-
-
-
- -V
3.0 4.0
0.1 10 µA
1 20
- 100 nA
0.83 1.15 mΩ
Rev. 1.0
page 2
2014-11-21


Part Number 4N041R1
Description Power-Transistor
Maker Infineon
Total Page 9 Pages
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