60R070D1 Datasheet | Infineon

IGOT60R070D1 IGOT60R070D1 600V Cool Ga N™ enhancement-mode Power Transistor Features - Enhancement mode transistor - Normally OFF switch - Ultra fast switching - No reverse-recovery charge - Capable of reverse conduction - Low gate charge, low output charge - Superior mutation ruggedness - Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) Benefits - Improves system efficiency - Improves power density - Enables higher operating frequency - System cost reduction savings - Reduces EMI 1 1 20 11 20 11 10 10 Gate Drain Kelvin Source Source not connected 9, 10 13,14,15,16,17,18 8 1,2,3,4,5,6,7, heatslug 11,12,19,20 Applications Industrial, tele, datacenter SMPS based on the half-bridge topology (half-bridge topologies for hard and soft switching such as Totem pole PFC, high frequency LLC). For other applications: review Cool Ga N™ reliability white paper and contact Infineon regional support Table...