60R070F7
Overview
- Ultra-fastbodydiode
- Lowgatecharge
- Best-in-classreverserecoverycharge(Qrr)
- ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness
- LowestFOMRDS(on)*QgandRDS(on)*Eoss
- Best-in-classRDS(on)inSMDandTHDpackages Benefits
- Excellenthardcommutationruggedness
- Highestreliabilityforresonanttopologies
- Highestefficiencywithoutstandingease-of-use/performancetradeoff
- Enablingincreasedpowerdensitysolutions Potentialapplications SuiteableforSoftSwitchingtopologies Optimizedforphase-shiftfull-bridge(ZVS),LLCApplications-Server, Telecom,EVCharging ProductValidation:Qualifiedforindustrialapplicationsaccordingtothe relevanttestsofJEDEC47/20/22 Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformance
