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IGT60R190D1S
IGT60R190D1S
600V CoolGaN™ enhancement-mode Power Transistor
Features
Enhancement mode transistor – Normally OFF switch Ultra fast switching No reverse-recovery charge Capable of reverse conduction Low gate charge, low output charge Superior commutation ruggedness Qualified for standard grade applications according to JEDEC standards
Benefits
Improves system efficiency Improves power density Enables higher operating frequency System cost reduction savings Reduces EMI
G G
SK
1 1
SK SK
G
1 1
Gate Drain Kelvin Source Source
8 drain contact
7 1,2,3,4,5,6
Applications
Consumer SMPS and high density chargers based on the half-bridge topology (half-bridge topologies for hard and soft switching such as Totem pole PFC, high frequency LLC and flyback).
60S190D1 Datasheet
