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60S2K1 - MOSFET

General Description

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Key Features

  • Extremely low losses due to very low FOM Rdson.
  • Qg and Eoss.
  • Very high commutation ruggedness.
  • Easy to use/drive.
  • Pb-free plating, Halogen free mold compound.
  • Qualified for standard grade.

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Other Datasheets by Infineon

Part Number Description
60S190D1 Power Transistor
60S1K0CE MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IPN60R2K1CE MOSFET 600VCoolMOSªCEPowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™CEisa price-performanceoptimizedplatformenablingtotargetcostsensitive applicationsinConsumerandLightingmarketsbystillmeetinghighest efficiencystandards.Thenewseriesprovidesallbenefitsofafast switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand offeringthebestcostdownperformanceratioavailableonthemarket.