60S2K1
Description
1 Final Data Sheet 2 Rev.2.0,2016-04-29 600VCoolMOSªCEPowerTransistor IPN60R2K1CE 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) ID Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current, repetitive MOSFET dv/dt ruggedness ID,pulse EAS EAR IAR dv/dt Gate source voltage VGS Power dissipation Operating and storage temperature Continuous diode forward current Diode pulse current2) Reverse diode dv/dt3) Maximum diode mutation speed3) Ptot Tj,Tstg IS IS,pulse dv/dt dif/dt Min.
Key Features
- ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
- Veryhighmutationruggedness
- Easytouse/drive
- Pb-freeplating,Halogenfreemoldpound
- Qualifiedforstandardgradeapplications
