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Infineon Technologies Electronic Components Datasheet

6R125P Datasheet

Power Transistor

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CoolMOSTM Power Transistor
Features
• Lowest figure-of-merit RONxQg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
Product Summary
V DS @ Tj,max
R DS(on),max
Q g,typ
IPB60R125CP
650 V
0.125
53 nC
PG-TO263
CoolMOS CP is specially designed for:
• Hard switching topologies, for Server and Telecom
Type
IPB60R125CP
Package
PG-TO263
Ordering Code
SP000088488
Marking
6R125P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
ID
I D,pulse
E AS
E AR
I AR
dv /dt
T C=25 °C
T C=100 °C
T C=25 °C
I D=11 A, V DD=50 V
I D=11 A, V DD=50 V
V DS=0...480 V
Gate source voltage
V GS static
AC (f >1 Hz)
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
Value
25
16
82
708
1.2
11
50
±20
±30
208
-55 ... 150
Unit
A
mJ
A
V/ns
V
W
°C
Rev. 1.0
Rev. 1.1
page 1
Page 1
2007-02-06
2018-03-28


Infineon Technologies Electronic Components Datasheet

6R125P Datasheet

Power Transistor

No Preview Available !

Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous diode forward current
Diode pulse current2)
Symbol Conditions
IS
I S,pulse
T C=25 °C
Reverse diode dv /dt 4)
dv /dt
IPB60R125CP
Value
16
82
15
Unit
A
V/ns
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient
R thJA
Soldering temperature,
wave- & reflowsoldering allowed
T sold
SMD version, device
on PCB, minimal
footprint
SMD version, device
on PCB, 6 cm2 cooling
area5)
reflow MSL1
Electrical characteristics, at T j=25 °C, unless otherwise specified
-
-
-
-
- 0.6 K/W
- 62
35 -
- 260 °C
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Rev. 1.0
Rev. 1.1
V (BR)DSS V GS=0 V, I D=250 µA
V GS(th) V DS=V GS, I D=1.1 mA
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
V DS=600 V, V GS=0 V,
T j=150 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on)
V GS=10 V, I D=16 A,
T j=25 °C
V GS=10 V, I D=16 A,
T j=150 °C
R G f =1 MHz, open drain
page 2
Page 2
600
2.5
-
-
-
-
-
-
- -V
3 3.5
- 2 µA
20 -
- 100 nA
0.11 0.125
0.30
-
2.1 -
2007-02-06
2018-03-28


Part Number 6R125P
Description Power Transistor
Maker Infineon
Total Page 10 Pages
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