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Infineon Technologies Electronic Components Datasheet

6R165P Datasheet

IPB60R165CP

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CoolMOS® Power Transistor
Features
• Lowest figure-of-merit RONxQg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
Product Summary
V DS @ Tj,max
R DS(on),max
Q g,typ
IPB60R165CP
650 V
0.165 Ω
39 nC
PG-TO263
CoolMOS CP is specially designed for:
• Hard switching topologies for Server and Telecom
Type
IPB60R165CP
Package
PG-TO263
Ordering Code
SP000096439
Marking
6R165P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse
ID
I D,pulse
E AS
T C=25 °C
T C=100 °C
T C=25 °C
I D=7.9 A, V DD=50 V
Avalanche
energy,
repetitive
t
2),3)
AR
E AR
I D=7.9 A, V DD=50 V
Avalanche
current,
repetitive
t
2),3)
AR
I AR
MOSFET dv /dt ruggedness
Gate source voltage
dv /dt
V GS
V DS=0...480 V
static
AC (f >1 Hz)
Power dissipation
Operating and storage temperature
P tot T C=25 °C
T j, T stg
Value
21
13
61
522
0.79
7.9
50
±20
±30
192
-55 ... 150
Unit
A
mJ
A
V/ns
V
W
°C
Rev. 2.1
page 1
2009-06-05
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Infineon Technologies Electronic Components Datasheet

6R165P Datasheet

IPB60R165CP

No Preview Available !

Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous diode forward current
Diode pulse current2)
Reverse diode dv /dt 4)
Symbol Conditions
IS
I S,pulse
dv /dt
T C=25 °C
IPB60R165CP
Value
12
61
15
Unit
A
V/ns
Parameter
Symbol Conditions
Values
Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
R thJC
R thJA
Soldering temperature,
reflowsoldering
T sold
SMD version, device
on PCB, minimal
footprint
SMD version, device
on PCB, 6 cm2 cooling
area5)
reflow MSL 1
-
--
-
- 0.65 K/W
62
35
- 260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V (BR)DSS V GS=0 V, I D=250 µA
600
V GS(th) V DS=V GS, I D=0.79 mA 2.5
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
V DS=600 V, V GS=0 V,
T j=150 °C
I GSS
R DS(on)
V GS=20 V, V DS=0 V
V GS=10 V, I D=12 A,
T j=25 °C
V GS=10 V, I D=12 A,
T j=150 °C
R G f =1 MHz, open drain
--
-1
-
-
-
-
- -V
3 3.5
1 µA
0-
-
0.15
100 nA
0.165 Ω
0.40
1.9
-
-Ω
Rev. 2.1
page 2
2007-11-22


Part Number 6R165P
Description IPB60R165CP
Maker Infineon
PDF Download

6R165P Datasheet PDF






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