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6R165P - IPB60R165CP

Key Features

  • Lowest figure-of-merit R ONxQg.
  • Ultra low gate charge.
  • Extreme dv/dt rated.
  • High peak current capability.
  • Qualified according to JEDEC1) for target.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IPB60R165CP CoolMOS® Power Transistor Features • Lowest figure-of-merit R ONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max Q g,typ 650 V 0.