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Infineon Technologies Electronic Components Datasheet

6R199P Datasheet

Power Transistor

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CoolMOS® Power Transistor
Features
• Lowest figure-of-merit RONxQg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
Product Summary
V DS @ Tj,max
R DS(on),max@T j= 25°C
Q g,typ
IPA60R199CP
650 V
0.199
32 nC
PG-TO220
CoolMOS CP is designed for:
• Hard switching SMPS topologies
Type
IPA60R199CP
Package
PG-TO220
Marking
6R199P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous drain current2)
Pulsed drain current3)
Avalanche energy, single pulse
Symbol Conditions
I D T C=25 °C
T C=100 °C
I D,pulse T C=25 °C
E AS I D=6.6 A, V DD=50 V
Avalanche
energy,
repetitive
t
3),4)
AR
E AR
I D=6.6 A, V DD=50 V
Avalanche
current,
repetitive
t
3),4)
AR
I AR
MOSFET dv /dt ruggedness
dv /dt V DS=0...480 V
Gate source voltage
V GS static
AC (f >1 Hz)
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
Mounting torque
M2.5 screws
Rev. 2.2
Rev. 2.3
page 1
Page 1
Value
16
10
51
436
0.66
6.6
50
±20
±30
34
-55 ... 150
50
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
2011-12-20
2018-02-14


Infineon Technologies Electronic Components Datasheet

6R199P Datasheet

Power Transistor

No Preview Available !

Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous diode forward current2)
Diode pulse current3)
Reverse diode dv /dt 5)
Symbol Conditions
IS
I S,pulse
T C=25 °C
dv /dt
IPA60R199CP
Value
16
51
15
Unit
A
V/ns
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient
R thJA
leaded
Soldering temperature,
wavesoldering only allowed at leads
T sold
1.6 mm (0.063 in.)
from case for 10 s
Values
Unit
min. typ. max.
- - 3.7 K/W
- - 80
- - 260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V (BR)DSS V GS=0 V, I D=250 µA
V GS(th) V DS=V GS, I D=0.66 mA
600
2.5
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
-
V DS=600 V, V GS=0 V,
T j=150 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on)
V GS=10 V, I D=9.9 A,
T j=25 °C
V GS=10 V, I D=9.9 A,
T j=150 °C
R G f =1 MHz, open drain
-
-
-
-
-
-
3
-
10
-
0.18
0.49
2
-V
3.5
1 µA
-
100 nA
0.199
-
-
Rev. 2.3
Page 2
2018-02-14


Part Number 6R199P
Description Power Transistor
Maker Infineon
Total Page 10 Pages
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