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Infineon Technologies Electronic Components Datasheet

6R950C6 Datasheet

MOSFET

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MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™C6600V
600VCoolMOS™C6PowerTransistor
IPx60R950C6
DataSheet
Rev.2.4
Final
PowerManagement&Multimarket


Infineon Technologies Electronic Components Datasheet

6R950C6 Datasheet

MOSFET

No Preview Available !

600V CoolMOSC6 Power Transistor
IPD60R950C6, IPB60R950C6
IPP60R950C6, IPA60R950C6
1 Description
CoolMOSis a revolutionary technology for high voltage power
MOSFETs, designed according to the superjunction (SJ) principle and
pioneered by Infineon Technologies. CoolMOSC6 series combines the
experience of the leading SJ MOSFET supplier with high class innovation.
The resulting devices provide all benefits of a fast switching SJ MOSFET
while not sacrificing ease of use. Extremely low switching and conduction
losses make switching applications even more efficient, more compact,
lighter, and cooler.
Features
• Extremely low losses due to very low FOM Rdson*Qg and Eoss
• Very high commutation ruggedness
• Easy to use/drive
• Qualified for industrial grade applications according to JEDEC1)
• Pb-free plating, Halogen free mold compound
Applications
PFC stages, hard switching PWM stages and resonant switching PWM
stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server,
Telecom and UPS.
Please note: For MOSFET paralleling the use of ferrite beads on the gate
or separate totem poles is generally recommended.
drain
pin 2
gate
pin 1
source
pin 3
Table 1 Key Performance Parameters
Parameter
Value
Unit
VDS @ Tj,max
RDS(on),max
Qg,typ
ID,pulse
Eoss @ 400V
Body diode di/dt
650
0.95
13
12
1.3
500
V
"
nC
A
µJ
A/µs
Type / Ordering Code
IPD60R950C6
IPB60R950C6
IPP60R950C6
IPA60R950C6
Package
PG-TO252
PG-TO263
PG-TO220
PG-TO220 FullPAK
Marking
6R950C6
1) J-STD20 and JESD22
Rev. 2.4
Page 2
Related Links
!IFX C6 Product Brief
!IFX C6 Portfolio
!IFX CoolMOS Webpage
!IFX Design tools
2018-03-05


Part Number 6R950C6
Description MOSFET
Maker Infineon
Total Page 18 Pages
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