600V CoolMOS™ C6 Power Transistor
IPD60R950C6, IPB60R950C6
IPP60R950C6, IPA60R950C6
1 Description
CoolMOS™ is a revolutionary technology for high voltage power
MOSFETs, designed according to the superjunction (SJ) principle and
pioneered by Infineon Technologies. CoolMOS™ C6 series combines the
experience of the leading SJ MOSFET supplier with high class innovation.
The resulting devices provide all benefits of a fast switching SJ MOSFET
while not sacrificing ease of use. Extremely low switching and conduction
losses make switching applications even more efficient, more compact,
lighter, and cooler.
Features
• Extremely low losses due to very low FOM Rdson*Qg and Eoss
• Very high commutation ruggedness
• Easy to use/drive
• Qualified for industrial grade applications according to JEDEC1)
• Pb-free plating, Halogen free mold compound
Applications
PFC stages, hard switching PWM stages and resonant switching PWM
stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server,
Telecom and UPS.
Please note: For MOSFET paralleling the use of ferrite beads on the gate
or separate totem poles is generally recommended.
drain
pin 2
gate
pin 1
source
pin 3
Table 1 Key Performance Parameters
Parameter
Value
Unit
VDS @ Tj,max
RDS(on),max
Qg,typ
ID,pulse
Eoss @ 400V
Body diode di/dt
650
0.95
13
12
1.3
500
V
"
nC
A
µJ
A/µs
Type / Ordering Code
IPD60R950C6
IPB60R950C6
IPP60R950C6
IPA60R950C6
Package
PG-TO252
PG-TO263
PG-TO220
PG-TO220 FullPAK
Marking
6R950C6
1) J-STD20 and JESD22
Rev. 2.4
Page 2
Related Links
!IFX C6 Product Brief
!IFX C6 Portfolio
!IFX CoolMOS Webpage
!IFX Design tools
2018-03-05
