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Infineon Technologies Electronic Components Datasheet

900N20N Datasheet

Power Transistor

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Type
OptiMOSTM3 Power-Transistor
Features
• Optimized for dc-dc conversion
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Low on-resistance R DS(on)
• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
BSZ900N20NS3 G
Product Summary
VDS
RDS(on),max
ID
200 V
90 mW
15.2 A
PG-TSDSON-8
Type
BSZ900N20NS3 G
Package
Marking
PG-TSDSON-8 900N20N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse
Reverse diode dv /dt
ID
I D,pulse
E AS
dv /dt
T C=25 °C
T C=100 °C
T C=25 °C
I D=7.6 A, R GS=25 W
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) see figure 3
Value
15.2
10.7
61
100
10
±20
62.5
-55 ... 150
55/150/56
Unit
A
mJ
kV/µs
V
W
°C
Rev. 2.2
page 1
2011-07-14


Infineon Technologies Electronic Components Datasheet

900N20N Datasheet

Power Transistor

No Preview Available !

Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case R thJC
Thermal resistance,
junction - ambient
R thJA
6 cm2 cooling area3)
BSZ900N20NS3 G
min.
Values
typ.
Unit
max.
- - 2.5 K/W
- - 60
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=30 µA
I DSS
V DS=160 V, V GS=0 V,
T j=25 °C
200
2
-
-
3
0.1
-V
4
1 µA
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V DS=160 V, V GS=0 V,
T j=125 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on) V GS=10 V, I D=7.6 A
RG
g fs
|V DS|>2|I D|R DS(on)max,
I D=7.6 A
-
-
-
-
8
10 100
1 100 nA
77 90 mW
2.2 - W
16 - S
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.2
page 2
2011-07-14


Part Number 900N20N
Description Power Transistor
Maker Infineon
Total Page 9 Pages
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