Datasheet Details
| Part number | AIDW30S65C5 |
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| Manufacturer | Infineon |
| File Size | 833.65 KB |
| Description | 650V/30A Silicon Carbide Schottky Diode |
| Datasheet |
 AIDW30S65C5 Datasheet
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General Description
The 5th Generation CoolSiC™ Automotive Schottky Diode represents Infineon leading edge technology for Silicon Carbide Schottky Barrier diodes.
Key Features
- Revolutionary semiconductor material - Silicon Carbide.
- Benchmark switching behavior.
- No reverse recovery/ No forward recovery.
- Temperature independent switching behavior.
- High surge current capability.
- Pb-free lead plating; RoHS compliant.
- Junction Temperature range from -40°C to 175°C.
- System efficiency improvement over Si diodes.
- System cost / size savings due to reduced cooling requirements.
- Enabling higher frequency / increased power densit.