AIKB50N65DF5 - IGBT

Description

Features

C High speed F5 technology offering:.
Best-in-Class efficiency in hard switching and resonant topologies.
650V breakdown voltage.
Low gate charge QG.
IGBT copacked with RAPID 1 fast and soft antiparallel diode.
Maximum junction temperature 175°C.
Dynamically stress tested.
Qualified according to AEC-Q101.
Green package (RoHS compliant).
Complete product spectrum and PSpice Models: http://www. inf.

Infineon

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Datasheet Details

Part number	AIKB50N65DF5
Manufacturer	Infineon
File Size	1.54 MB
Description	IGBT
Datasheet	AIKB50N65DF5 Datasheet
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AIKB50N65DF5 Highspeedswitchingseriesfifthgeneration HighspeedfastIGBTinTRENCHSTOPTM5technologycopackedwith RAPID1fastandsoftantiparalleldiode FeaturesandBenefits: C HighspeedF5technologyoffering: •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowgatechargeQG •IGBTcopackedwithRAPID1fastandsoftantiparalleldiode •Maximumjunctiontemperature175°C •Dynamicallystresstested •QualifiedaccordingtoAEC-Q101 •Greenpackage(RoHScompliant) •CompleteproductspectrumandPSpiceModels: http://www.infineon.

Published: Dec 16, 2020 |