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AUIRF7484Q Datasheet Power MOSFET

Manufacturer: Infineon

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General Description

Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

SO-8 AUIRF7484Q G Gate D Drain S Source Base part number AUIRF7484Q Package Type SO-8 Standard Pack Form Quantity Tape and Reel 4000 Orde

Overview

  AUTOMOTIVE GRADE AUIRF7484Q.

Key Features

  • Advanced Planar Technology.
  • Low On-Resistance.
  • 150°C Operating Temperature.
  • Fast Switching.
  • Fully Avalanche Rated.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  •  S S S G 18 27 36 45 Top View AA D D D D HEXFET® Power MOSFET VDSS RDS(on) max. ID 40V 10m 14A.

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