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Infineon Technologies Electronic Components Datasheet

AUIRF7665S2 Datasheet

Power MOSFET

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AUTOMOTIVE GRADE
AUIRF7665S2TR
Advanced Process Technology
Optimized for Class D Audio Amplifier Applications
Low Rds(on) for Improved Efficiency
Low Qg for Better THD and Improved Efficiency
Low Qrr for Better THD and Lower EMI
Low Parasitic Inductance for Reduced Ringing and Lower EMI
Delivers up to 100W per Channel into 8with No Heatsink
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Capability for Robustness and Reliability
Lead free, RoHS and Halogen free
 Automotive Qualified *
Automotive DirectFET® Power MOSFET
V(BR)DSS
RDS(on) typ.
max.
RG (typical)
Qg (typical)
100V
51m
62m
3.5
8.3nC
Applicable DirectFET® Outline and Substrate Outline
SB
DirectFET® ISOMETRIC
SB
SC
M2
M4
L4
L6
L8
Description
The AUIRF7665S2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging platform to
produce a best in class part for Automotive Class D audio amplifier applications. The DirectFET® package is compatible with existing layout
geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application
note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize
thermal transfer in automotive power systems.
This HEXFET® Power MOSFET optimizes gate charge, body diode reverse recovery and internal gate resistance to improve key Class D audio
amplifier performance factors such as efficiency, THD and EMI. Moreover the DirectFET® packaging platform offers low parasitic inductance and
resistance when compared to conventional wire bonded SOIC packages which improves EMI performance by reducing the voltage ringing that
accompanies current transients.
These features combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier systems.
Base Part Number
AUIRF7665S2
Package Type
DirectFET Small Can
Standard Pack
Form
Quantity
Tape and Reel
4800
Orderable Part Number
AUIRF7665S2TR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TA = 25°C
EAS
EAS (Tested)
IAR
EAR
TP
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Max.
100
±20
14.4
10.2
4.1
77
58
30
2.4
37
56
See Fig. 16, 17, 18a, 18b
270
-55 to + 175
Units
V
A
W
mJ
A
mJ
°C
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
2015-10-5


Infineon Technologies Electronic Components Datasheet

AUIRF7665S2 Datasheet

Power MOSFET

No Preview Available !

AUIRF7665S2TR
Thermal Resistance
Symbol
Parameter
RJA
RJA
RJA
RJ-Can
RJ-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Can 
Junction-to-PCB Mounted
Linear Derating Factor
Typ.
–––
12.5
20
–––
1.4
Max.
63
–––
–––
5.0
–––
0.2
Units
°C/W
W/°C
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
VGS(th)/TJ
gfs
RG
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Forward Transconductance
Internal Gate Resistance
IDSS
Drain-to-Source Leakage Current
100 ––– ––– V VGS = 0V, ID = 250µA
––– 0.10 ––– V/°C Reference to 25°C, ID = 1.0mA
––– 51 62 m VGS = 10V, ID = 8.9A
3.0 4.0 5.0 V
––– -13 ––– mV/°C VDS = VGS, ID = 25µA
8.8 ––– –––
––– 3.5 5.0
S VDS = 25V, ID = 8.9A

––– ––– 5.0
––– ––– 250
µA
VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100
––– ––– -100
nA
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss
Total Gate Charge
Gate-to-Source Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Output Capacitance
––– 8.3 13
––– 1.9 –––
––– 0.77 –––
––– 3.2 –––
––– 2.4 –––
––– 4.0 –––
––– 4.7 –––
––– 3.8 –––
––– 6.4 –––
––– 7.1 –––
––– 3.6 –––
––– 515 –––
––– 110 –––
––– 30 –––
––– 530 –––
––– 70 –––
––– 115 –––
VDS = 50V
VGS = 10V
nC
ID = 8.9A
See Fig. 11
nC VDS = 16V, VGS = 0V
VDD = 50V
ns
ID = 8.9A
RG = 6.8
VGS = 10V
VGS = 0V
VDS = 25V
ƒ = 1.0 MHz
pF VGS = 0V, VDS = 1.0V, ƒ = 1.0 MHz
VGS = 0V, VDS = 80V, ƒ = 1.0 MHz
VGS = 0V, VDS = 0 to 80V
Notes through are on page 3
2
2015-10-5


Part Number AUIRF7665S2
Description Power MOSFET
Maker Infineon
PDF Download

AUIRF7665S2 Datasheet PDF






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