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AUIRF7665S2 Datasheet Power MOSFET

Manufacturer: Infineon

Overview: AUTOMOTIVE GRADE AUIRF7665S2TR  Advanced Process Technology  Optimized for Class D Audio Amplifier Applications  Low Rds(on) for Improved Efficiency  Low Qg for Better THD and Improved Efficiency  Low Qrr for Better THD and Lower EMI  Low Parasitic Inductance for Reduced Ringing and Lower EMI  Delivers up to 100W per Channel into 8 with No Heatsink  Dual Sided Cooling  175°C Operating Temperature  Repetitive Avalanche Capability for Robustness and Reliability  Lead free, RoHS and Halogen free  Automotive Qualified * Automotive DirectFET® Power MOSFET  V(BR)DSS RDS(on) typ. max. RG (typical) Qg (typical) 100V 51m 62m 3.5 8.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The AUIRF7665S2 bines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging platform to produce a best in class part for Automotive Class D audio amplifier applications.

The DirectFET® package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.

The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems.

Key Features

  • combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier systems. Base Part Number AUIRF7665S2 Package Type DirectFET Small Can Standard Pack Form Quantity Tape and Reel 4800 Orderable Part Number AUIRF7665S2TR Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond thos.

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