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Infineon Technologies Electronic Components Datasheet

AUIRFR4292 Datasheet

Power MOSFET

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  AUTOMOTIVE GRADE
Features
Advanced Process Technology
Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
 
VDSS
RDS(on)
ID
D
AUIRFR4292
AUIRFU4292
typ.
max.
250V
275m
345m
9.3A
D
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide
variety of other applications.
S
G
D-Pak
AUIRFR4292
S
GD
I-Pak
AUIRFU4292
G
Gate
D
Drain
S
Source
Base part number
AUIRFU4292
AUIRFR4292
Package Type
I-Pak
D-Pak
Standard Pack
Form
Quantity
Tube
75
Tube
75
Tape and Reel Left 3000
Tape and Reel Right 3000
Orderable Part Number
AUIRFU4292
AUIRFR4292
AUIRFR4292TRL
AUIRFR4292TRR
Note
EOL notice # 530
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
EAS (Tested)
IAR
EAR
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance  
Symbol
Parameter
RJC Junction-to-Case
RJA Junction-to-Ambient ( PCB Mount)
RJA Junction-to-Ambient
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
Max.
9.3
6.6
40
100
0.67
± 20
130
97
See Fig.15,16, 12a, 12b
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
 
°C 
 
Typ.
–––
–––
–––
Max.
1.5
50
110
Units
°C/W
2015-10-12


Infineon Technologies Electronic Components Datasheet

AUIRFR4292 Datasheet

Power MOSFET

No Preview Available !

  AUIRFR/U4292
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
250 ––– ––– V VGS = 0V, ID = 250µA
––– 0.31 ––– V/°C Reference to 25°C, ID = 1mA
––– 275 345 m VGS = 10V, ID = 5.6A
3.0 ––– 5.0 V VDS = VGS, ID = 50µA
6.2 ––– ––– S VDS = 50V, ID = 5.6A
–––
–––
–––
–––
20
250
µA
VDS = 250 V, VGS = 0V
VDS = 250V,VGS = 0V,TJ =125°C
–––
–––
––– 200
––– -200
nA
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain Charge
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
LD Internal Drain Inductance
LS Internal Source Inductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
Coss Output Capacitance
Coss eff.
Effective Output Capacitance
Diode Characteristics  
––– 13 20
ID = 5.6A
––– 4.7 ––– nC   VDS = 125V
––– 4.8 –––
VGS = 10V
––– 11 –––
VDD = 250V
–––
–––
15
16
–––
–––
ns
ID = 5.6A
RG = 15
––– 8.4 –––
VGS = 10V
–––
–––
4.5
7.5
–––
–––
Between lead,
nH
 
6mm (0.25in.)
from package
and center of die contact
––– 705 –––
VGS = 0V
––– 71 –––
VDS = 25V
–––
–––
20
600
–––
–––
pF
 
ƒ = 1.0MHz
VGS = 0V, VDS
=
1.0V
ƒ
=
1.0MHz
––– 26 –––
VGS = 0V, VDS = 200V ƒ = 1.0MHz
––– 65 –––
VGS = 0V, VDS = 0V to 200V
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 9.3
––– ––– 40
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
––– ––– 1.3 V TJ = 25°C,IS = 5.6A,VGS = 0V 
––– 110 165 ns TJ = 25°C ,IF = 5.6A, VDD = 125V
––– 390 585 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Limited by TJmax , starting TJ = 25°C, L = 8.1mH, RG = 50, IAS = 5.6A, VGS =10V. Part not recommended for use above this value.
Pulse width 1.0ms; duty cycle 2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
This value determined from sample failure population. starting TJ = 25°C, L = 8.1mH, RG = 50, IAS = 5.6A, VGS =10V.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
Ris measured at TJ approximately 90°C
2 2015-10-12


Part Number AUIRFR4292
Description Power MOSFET
Maker Infineon
Total Page 12 Pages
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