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AUIRFR8405 - Power MOSFET

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • Advanced Process Technology.
  • New Ultra Low On-Resistance.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  •   VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) D D 40V 1.65m 1.98m 211A 100A.

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Full PDF Text Transcription

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  AUTOMOTIVE GRADE AUIRFR8405 AUIRFU8405 Features  Advanced Process Technology  New Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) D D 40V 1.65m 1.98m 211A 100A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
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