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AUIRGPS4067D1 - INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • Low VCE (on) Trench IGBT Technology.
  • Low Switching Losses.
  • 6µs SCSOA.
  • Square RBSOA.
  • 100% of the parts tested for ILM .
  • Positive VCE (on) Temperature Coefficient.
  • Soft Recovery Co-pak Diode.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  • C G E n-channel VCES = 600V IC = 160A, TC = 100°C tsc 6µs, TJ(MAX) = 175°C VCE(on) typ. = 1.70V C Benefits.
  • High Efficiency in a Wide Range of.

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AUTOMOTIVE GRADE AUIRGPS4067D1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features  Low VCE (on) Trench IGBT Technology  Low Switching Losses  6µs SCSOA  Square RBSOA  100% of the parts tested for ILM   Positive VCE (on) Temperature Coefficient  Soft Recovery Co-pak Diode  Lead-Free, RoHS Compliant  Automotive Qualified * C G E n-channel VCES = 600V IC = 160A, TC = 100°C tsc 6µs, TJ(MAX) = 175°C VCE(on) typ. = 1.