AUIRGPS4067D1 transistor equivalent, insulated gate bipolar transistor.
* Low VCE (on) Trench IGBT Technology
* Low Switching Losses
* 6µs SCSOA
* Square RBSOA
* 100% of the parts tested for ILM
* Positive VCE (on) T.
* Suitable for Applications in the Low to Mid-Range Frequencies
* Rugged Transient Performance for Increased Rel.
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