AUIRGPS4067D1 - INSULATED GATE BIPOLAR TRANSISTOR

Infineon

Datasheet Details

Part number	AUIRGPS4067D1
Manufacturer	Infineon ↗
File Size	414.62 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	AUIRGPS4067D1-Infineon.pdf

Low VCE (on) Trench IGBT Technology.
Low Switching Losses.
6µs SCSOA.
Square RBSOA.
100% of the parts tested for ILM .
Positive VCE (on) Temperature Coefficient.
Soft Recovery Co-pak Diode.
Lead-Free, RoHS Compliant.
Automotive Qualified.
C G E n-channel VCES = 600V IC = 160A, TC = 100°C tsc 6µs, TJ(MAX) = 175°C VCE(on) typ. = 1.70V C Benefits.
High Efficiency in a Wide Range of.

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Published: Apr 11, 2020 |