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Infineon Technologies Electronic Components Datasheet

BAT60B Datasheet

Silicon Schottky Diode

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Silicon Schottky Diode
High current rectifier Schottky diode with
very low VF drop (typ. 0.24 V at IF = 10mA)
For power supply applications
For clamping and protection in
low voltage applications
For detection and step-up-conversion
Pb-free (RoHS compliant) package1)
Qualified according AEC Q101
BAT60B...
BAT60B

ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BAT60B
Package
SOD323
Configuration
single
Marking
white/5
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage2)
VR
Forward current
IF
Non-repetitive peak surge forward current
(t 10ms)
I FSM
Value
10
3
5
Unit
V
A
Total power dissipation
Ptot
1350
mW
TS 28°C
Junction temperature
Tj 150 °C
Operating temperature range
Top -55 ... 125
Storage temperature
Tstg -55 ... 150
1Pb-containing package may be available upon special request
2For TA > 25 °C the derating of VR has to be considered. Please refer to curve Permissible reverse voltage.
1 2007-04-19


Infineon Technologies Electronic Components Datasheet

BAT60B Datasheet

Silicon Schottky Diode

No Preview Available !

BAT60B...
Thermal Resistance
Parameter
Junction - soldering point1)
Symbol
RthJS
Value
90
Unit
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Reverse current2)
VR = 5 V
VR = 8 V
VR = 5 V, TA = 80 °C
VR = 8 V, TA = 80 °C
IR
- 5 15
- 10 25
- 100 800
- 410 1500
Forward voltage2)
IF = 10 mA
VF
0.2 0.24 0.3
IF = 100 mA
0.26 0.32 0.38
IF = 500 mA
IF = 1000 mA
0.32 0.4
0.36 0.48
0.5
0.6
Unit
µA
V
AC Characteristics
Diode capacitance
CT 12 25 30 pF
VR = 5 V, f = 1 MHz
1For calculation of RthJA please refer to Application Note Thermal Resistance
2Pulsed test: tp = 300 µs; D = 0.01
2 2007-04-19


Part Number BAT60B
Description Silicon Schottky Diode
Maker Infineon
Total Page 6 Pages
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