BSB104N08NP3
Description
1 Final Data Sheet 2 Rev.2.2,2018-11-15 OptiMOSª3Power-MOSFET,80V BSB104N08NP3G 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Pulsed drain current2) Avalanche energy, single pulse3) Gate source voltage Power dissipation Operating and storage temperature ID ID,pulse EAS VGS Ptot Tj,Tstg Min.
Key Features
- OptimizedtechnologyforDC/DCconverters
- ExcellentgatechargexRDS(on)product(FOM)
- Lowprofile(<0.7mm)
- Dualsidedcooling
- Lowparasiticinductance
