BSC005N03LS5 - MOSFET

Description

Features

Very low on-resistance RDS(on) @ VGS=4.5 V.
Optimized charges for fast switching.
Optimized QGD/QGS for induced turn on ruggedness.
Superior thermal resistance.
N-channel.
100% avalanche tested.
Pb-free lead plating; RoHS compliant.
Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial.

Infineon

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Datasheet Details

Part number	BSC005N03LS5
Manufacturer	Infineon
File Size	1.51 MB
Description	MOSFET
Datasheet	BSC005N03LS5 Datasheet
Additional preview pages of the BSC005N03LS5 datasheet.

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Full PDF Text Transcription

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BSC005N03LS5 MOSFET OptiMOSTM5Power-Transistor,30V Features •Verylowon-resistanceRDS(on)@VGS=4.5V •Optimizedchargesforfastswitching •OptimizedQGD/QGSforinducedturnonruggedness •Superiorthermalresistance •N-channel •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 30 V RDS(on),max 0.55 mΩ ID 433 A Qoss 70 nC QG(0V..4.

Published: May 11, 2022 |