BSC025N03LS
Description
inal Data Sheet 2 Rev.2.0,2020-08-10 OptiMOSª3Power-MOSFET,30V BSC025N03LSG 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) ID Pulsed drain current3) Avalanche current, single pulse4) Avalanche energy, single pulse Reversediodedv/dt Gate source voltage Power dissipation Operating and storage temperature ID,pulse IAS EAS dv/dt VGS Ptot Tj,Tstg Min.
Key Features
- FastswitchingMOSFETforSMPS
- OptimizedtechnologyforDC/DCconverters
- QualifiedaccordingtoJEDEC1)fortargetapplications
- N-channel;Logiclevel
- ExcellentgatechargexRDS(on)product(FOM)
- Verylowon-resistanceRDS(on)
- Superiorthermalresistance
- Avalancherated
- Pb-freeplating;RoHSpliant
- Halogen-freeaccordingtoIEC61249-2-21
