BSC025N03MS
Description
inal Data Sheet 2 Rev.2.0,2020-07-21 OptiMOSª3M-SeriesPower-MOSFET,30V BSC025N03MSG 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) ID Pulsed drain current3) Avalanche current, single pulse4) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature ID,pulse IAS EAS VGS Ptot Tj,Tstg Min.
Key Features
- Optimizedfor5Vdriverapplication(Notebook,VGA,POL)
- LowFOMSWforHighFrequencySMPS
- 100%avalanchetested
- Verylowon-resistanceRDS(on)@VGS=4.5V
- ExcellentgatechargexRDS(on)product(FOM)
- QualifiedaccordingtoJEDEC1)fortargetapplications
- Superiorthermalresistance
- Pb-freeplating;RoHSpliant
- Halogen-freeaccordingtoIEC61249-2-21
