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BSC026N08NS5 - MOSFET

General Description

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Key Features

  • Optimized for Synchronous Rectification in server and desktop.
  • 100% avalanche tested.
  • Superior thermal resistance.
  • N-channel.
  • Qualified according to JEDEC1) for target.

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Full PDF Text Transcription for BSC026N08NS5 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BSC026N08NS5. For precise diagrams, and layout, please refer to the original PDF.

BSC026N08NS5 MOSFET OptiMOSTM5Power-Transistor,80V Features •OptimizedforSynchronousRectificationinserveranddesktop •100%avalanchetested •Superiorthermal...

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tioninserveranddesktop •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 80 V RDS(on),max 2.6 mΩ ID 184 A Qoss 88 nC QG(0V..10V) 74 nC PG-TDSON-8 8 7 6 5 5 6 7 8 Pin 1 2 3 4 4 3 2 1 Drain Pin 5-8 Gate *1 Pin 4 Source *1: Internal body diode Pin 1-3 Type/OrderingCode BSC026N08NS5 Package PG-TDSON-8 Marking 026N08NS RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.

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