BSC028N06NST - 60V MOSFET

Description

Features

Optimized for high performance SMPS, e. g. sync. rec.
175 °C rated.
100% avalanche tested.
Superior thermal resistance.
N-channel.
Qualified according to JEDEC1) for target.

Infineon

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Datasheet Details

Part number	BSC028N06NST
Manufacturer	Infineon
File Size	1.34 MB
Description	60V MOSFET
Datasheet	BSC028N06NST Datasheet
Additional preview pages of the BSC028N06NST datasheet.

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Full PDF Text Transcription

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BSC028N06NST MOSFET OptiMOSTMPower-Transistor,60V Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •175°Crated •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),max 2.8 mΩ ID 137 A Qoss 43 nC QG(0..10V) 37 nC SuperSO8 8 7 65 56 78 1 23 4 4321 S1 8D S2 7D S3 6D G4 5D Type/OrderingCode BSC028N06NST Package PG-TDSON-8 Marking 028N06NT RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.4,2020-09-21 OptiMOSTMPower-Transistor,60V BSC028N06NST TableofContents Description . . . . . .

Published: Apr 4, 2020 |